Method of fabricating an offset dual gate thin film field effect transistor

ABSTRACT

A method of fabricating an offset dual gate thin film field offset transistor wherein a lower gate electrode is formed on an insulating substrate is provided. A dielectric layer deposited. A polycrystalline silicon layer deposited and patterned to overlie and extend beyond the edges of the lower gate. A dielectric layer deposited. A metal layer deposited. A photoresist layer deposited and patterned to define a upper gate electrode in the metal layer that overlies the lower gate electrode but extend beyond one edge. The exposed metal layer is removed to form the upper gate electrode. An impurity is ion implanted into the polycrystalline silicon layer to form source and drain regions, using the photoresist layer and metal layer as a mask.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

This invention relates to improved thin film transistors, moreparticularly to thin film field effect transistors, provided with dualgate electrodes, one of which has an offset. The invention also relatesto methods of fabricating dual gate transistors.

(2) Description of Prior Art

Many different types of semiconductor devices that can store binaryinformation, or data in terms of electric charges, have been developedand are at present used in various computer memories. The list includes,static memories, dynamic memories, read only memories and the like.Semiconductor device memories are widely used because they have thecapability of high integration density, and are relatively inexpensive.Among these memories, the static type semiconductor memory has foundwide application as a random access memory (RAM), because it can retainstored data without periodic refresh operations.

The static random access memory (SRAM) can be implemented by a largenumber of flip-flop circuits, each of which stores one bit ofinformation. CMOS flip-flop circuits, each normally composed of a pairof N-channel MOS field effect transistors, and a pair of P-channel MOSfield effect transistors, are widely utilized as memory cells becausepower consumption of the device is very low. However, initially CMOSflip-flop memories necessitated a relatively large area on asemiconductor substrate, making high integration density difficult toattain.

A general circuit structure of the CMOS type static memory cell may beunderstood by reference to U.S. Pat. No. 4,980,732 and is shown inFIG. 1. In FIG. 1, N-channel MOS transistors QN1, QN2 and P-channel MOStransistors QP1 and QP2 form a CMOS flip-flop circuit in which thetransistors QP1 and QN1 having electrically common gates G1 form a firstCMOS inverter, and the transistors QP2 and QN2 having electricallycommon gates G2 form a second CMOS inverter. Output nodes N1 and N2 ofthe first and second CMOS inverters are connected to a pair of digitlines DL and SL, via a pair of N-channel transfer gate transistors QN3and QN4, controlled by a word line, WL.

In order to reduce the area that each CMOS circuit occupied on thedevice, it was proposed to form a pair of P-channel MOS transistors asthin film transistors (TFTS), such as silicon-on-insulator (SOI)structure, with the other pair of N-channel transistors formed in thebody of the device. With this structure, the P-channel transistors canoverlap a part of the N-channel MOS transistors, and therefore theintegration scale of the SRAM is enlarged.

An example of how a thin film transistor is embodied in a CMOS structureis illustrated in FIG. 2. In FIG. 2, a P-type silicon substrate 10 isoverlaid with a gate insulator film 16, on which a gate electrode 14 ofpolycrystalline silicon is formed. In silicon substrate 10 on both sidesof the gate electrode 14, N-type diffused regions 14A and 14B at animpurity concentration of between 10²⁰ and 10²¹ Cm⁻³ are formed assource and drain regions of transistor QN1. The gate electrode 14 andthe N-type diffused regions 14A, 14B constitute the N-channel transistorQN1 in FIG. 1. Accordingly, the N-type diffused region 14A is connectedto the ground potential. In FIG. 2, a gate insulator film 17 is formedon the gate electrode 14, and an N-type silicon thin film 13 is formedon the gate insulator films 16 and 17. P-type diffused region 13S and13D of an impurity concentration of between 10¹⁹ and 10²¹ Cm⁻³ areformed in the ports of the silicon thin film 13 on both the sides of thegate electrode 14, and the P-channel transistor QP1 in FIG. 1 is formedby the SOI structure by the gate electrode 14 and the P-type diffusedregions 13S, 13D. The P-type diffused layer 13S is connected to powersource potential Vcc by a lead out electrode 11 composed of aluminum.The P-type diffused layer 13D and the N-type diffused region 14B areconnected by a conductive layer 18 of aluminum at node N1. Symbols 12A,12B and 12C denote thick insulator films, and numeral 15 denotes a portof gate electrode G2 of the second inverter which is formed of P-channeltransistor QP2 and N-channel transistor QN2 in FIG. 1.

However, the crystalline characteristics of the polycrystalline siliconfilm, or the monocrystalline silicon film formed on the semiconductorsubstrate over an insulating layer is not good, and a P-N junctionformed in the silicon film is very leaky. Therefore, power consumption,that is standby current of the SRAM employing the aforementioned SOItype transistors, is relatively large.

A solution to reduce the leakage in a polycrystalline silicon layer of athin film transistor is set forth in U.S. Pat. No. 4,980,732 and isillustrated in FIG. 3. In FIG. 3 the elements corresponding to theelements shown in FIG. 2 are denoted by the same reference numerals.Note that the P-N junction 20 between the channel region 13 and drainregion 13D is spaced from the gate electrode 14. In contrast,corresponding P-N junction 19 in FIG. 2 is directly above gate electrode14. This space between the channel and the drain reduces theGate-induced Drain Leakage which is caused by the band-to-band tunnelingin the gate overlap region of the drain.

As is believed apparent, the locating of the blocking mask for ionimplanting the impurities into the polycrystalline film that forms thesource and drain regions of the transistor is very exacting. Theaccuracy of defining the geometry of offset region is limited by theoverlay accuracy of photo lithography process which could be largecompared with its typical value.

FIG. 4 illustrates a modification of the structure shown in FIG. 3 asgiven in the U.S. Pat. No. 4,980,732. In FIG. 4 the elementscorresponding to the elements shown in FIGS. 2 and 3 are denoted by thesame reference numerals. FIG. 4 illustrates a different placement of thethin film P-channel transistor, i.e. over a thick oxide layer 16A. Gateelectrode 19 is provided which is electrically connected to gate 14 ofthe N-channel transistor.

In such very small Thin Film Devices (TFT) with very short channellength, the leakage through the devices in the off state, presentsformidable problems. This presents more of a problem, since the mediumin the body of the transistor is polycrystalline silicon, as contrastedwith monocrystalline silicon. Dual gate electrodes positioned onopposite sides of the polycrystalline layer are known and havematerially increased the on current. But the dual gate without offsetwill still suffer from the large off current, because existence of largegate to drain electric field.

The use of a single gate electrode with an offset region in thin filmtransistors is also known and has been implemented to reduce the leakagein the off condition. This TFT structure is described in U.S. Pat. No.4,980,732.

The offset could reduce the electric field between gate and drain andthus reduce the induced leakage current, which is also known as gateinduced drain leakage (GIDL).

While the prior art recognizes the need to minimize or eliminate leakagecurrent in thin film transistors, and has separately used the twoaforedescribed structures to meet the objective, further reduction isvery desirable.

SUMMARY OF THE INVENTION

An object of the invention is to provide an improved thin filmtransistor that exhibits minimal leakage current.

Another object of the present invention is to provide a method forfabricating an improved thin film transistor, with larger on current.

The mask number of the invention is not increased compared with singlegate with an offset.

In accordance with the above objects of the invention, the process offorming an offset dual gate thin transistor is presented. A narrowconductive stripe is formed on an insulating substrate. A layer ofdielectric material is deposited over the stripe. A layer ofpolycrystalline silicon is deposited over the stripe which extendsbeyond the width of the stripe. A layer of dielectric material isdeposited over the polycrystalline silicon. A layer of conductivematerial is deposited over the dielectric layer. A photoresist layer isdeposited and patterned on the dielectric layer such that it overlapsthe stripe but extends beyond on edge thereof. The exposed portions ofthe conductive layer are etched away. A blanket ion implantation with asuitable impurity is performed using the resist as a mask to form sourceand drain regions in the polycrystalline layer. After the resist isremoved, a dielectric layer is formed over the remaining conductivelayer.

The offset dual gate thin film transistor has a narrow stripe ofconductive material supported on a substrate, which stripe constitutes alower gate electrode. A dielectric layer overlies the lower gateelectrode, a layer of polycrystalline silicon overlies the lower gateelectrode, and extends beyond the edges thereof, a dielectric layeroverlies the polycrystalline silicon layer, an upper offset gateelectrode located above the lower gate electrode with a portion thereofextends beyond one edge of the lower gate electrode, and source anddrain regions in the polycrystalline layer are located beyond theopposite edges of the upper offset gate electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and further objects, features, and advantages of the presentinvention, will become more apparent from the following detaileddescription taken in conjunction with the drawings, wherein:

FIG. 1 is a schematic circuit diagram of a CMOS static memory cell knownto the prior art;

FIGS. 2 and 3 are schematic, cross-sectional views of a portion of aCMOS static memory cell, known to the prior art;

FIG. 4 is a schematic, cross-sectional view of a portion of an improvedCMOS static memory cell, known to the prior art.

FIGS. 5 through 11 is a sequence of sectional views, in greatly enlargedscale, that illustrate the method of the invention for fabricating animproved thin film transistor.

FIG. 12 is a cross sectional view of a portion of a CMOS static memorycell embodying the improved thin film transistor of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will be described in detail with reference to theaccompanying drawings. It should be noted that the drawings are ingreatly simplified form, and illustrate only the transistor structure.In practice the transistor will be only one of many supported on acommon substrate, normally a monocrystalline silicon substratecontaining other devises, insulation regions, diffused regions, andinterconnected with suitable metallurgy into various electronic circuitconfigurations, most preferable CMOS SRAM circuits. However, thetransistor of the invention can be used in any suitable application. Thepreferred application is in a SRAM.

Referring now to the drawings, and in particular FIG. 5, there is showna conductive stripe 10 supported on monocrystalline silicon device insubstrate 20. The stripe is typically a word line or an extensionthereof, of a CMOS memory. The stripe can be of any suitable conductivematerial, preferably a metal, most preferably a conductive layer such asdoped polysilicon or polycide. The width of such a stripe is typicallyin the range of 0.4 to 1.8 micrometers, and the thickness is in therange of 100 to 2000 Angstrom. When the transistor is used as an elementin a semiconductor device, the substrate 20 can be a monocrystallinesemiconductor substrate with an overlying insulating layer (not shown)and embodying numerous other active and passive devices. The stripe 10can be deposited by any suitable method, such as sputter deposition, orchemical vapor techniques that are well known in the art. The stripe 10can be formed by any suitable etching technique.

As shown in FIG. 6, a thin dielectric layer 24 is deposited over stripe10. Stripe 10 will eventually serve as the lower gate electrode, andlayer 24 will serve as the gate dielectric. The layer 24 preferably isSiO₂ and has a thickness in the range of 100 to 600 Angstrom, and can bedeposited by Low Pressure Chemical Vapor Deposition (LPCVD).

As shown in FIG. 7, a layer 26 of polycrystalline silicon is depositedover layer 24. Layer 26 preferably has a thickness in the range of 50 to1000 Angstroms, and can be either undoped or doped to increase grainsize and/or the threshold. The layer 26 is preferably deposited byLPCVD, either with Si₂ H₆ or SiH₄. Layer 26 is patterned, using standardphotolithographic and subtractive etching techniques to overlie stripe10 and extend beyond its edges.

As shown in FIG. 8, dielectric layer 28 is deposited over layer 26.Layer 28 preferably has a thickness in the range of 500 to 2000Angstroms, deposited by LPCVD and is formed of any suitable material,for example, SiO₂. Layer 28 will serve as an upper gate dielectric forthe transistor being fabricated.

As shown in FIG. 9, a conductive layer 30 is deposited over layer 28.Layer 30 is preferably polysilicon and can be deposited by LPCVD.

As indicated in FIG. 10, a photoresist layer 32 is deposited over layer30, and shaped to form the top electrode. The exposed areas of layer 30are removed by dry etching. Note that the upper gate electrode 30overlies lower gate electrode 10, with one edge of electrode 30 directlyover one edge of the lower electrode 10, and the opposite edgeoverlapping the edge of lower electrode 10 by a significant amount. Thisoverlap 27 is in the range of 0.2 to 0.6 micrometers.

A blanket ion implant, indicated by arrows 34, of a suitable impurityion, such as BF₂ is performed using photoresist layer 32 as a mask. Theions introduced into polycrystalline layer 26 form source and drainregions 36 and 38, as indicated in FIG. 11. After resist layer 32 isremoved, a suitable dielectric layer (not shown) is deposited over thesurface of gate electrode 30. The device is then completed, i.e. theterminal connections made to the source and drain regions 26 and 28,depending on the application the device is used in.

Compared with a single gate, the dual gate region 29 could induce morecarrier concentration and thus increase the on current. Note the offsetregion 27 with top gate only and thicker gate oxide, the carrierconcentration is less than that in dual gate region 29, and thus theelectric field is reduced as well as the leakage current. On the otherhand the overlap region 17 still has lower sheet resistance than theoffset of previous single gate devices which could increase the oncurrent more.

FIG. 12 illustrates the improved thin film transistor of the inventionembodied in a convention CMOS device cell. The lower gate is shown as apolysilicon layer 10, that underlies a thin film polycrystalline layer26 having source and drain regions 36 and 38. The upper gate 30 is shownalong with offset 27. The remaining elements mounted on, or in,semiconductor substrate 20, are conventional, including bit line 40,word line 42, field oxide 44, access transistor 46, with the word line42, as the gate, and regions 48 as source and drain regions.

The aforedescribed dual gate TFT with an offset gate is particularlyadapted for use in a CMOS SRAM, since it will materially increasecurrent flow while reducing the off condition current leakage in a TFT,as compared to the known TFT structure i.e. a dual gate and an offsetgate structure.

While the invention has been particularly shown and described withreference to the preferred embodiments thereof, it will be understood bythose skilled in the art, that various changes in form and details maybe made without departing from the spirit and scope of the invention.

What is claimed is:
 1. A method of forming an offset dual gate thin filmfield effect transistor comprising:providing an insulating substrate;depositing a narrow stripe of conductive material on said substrate toserve as a lower gate electrode; depositing a thin first layer ofdielectric material over said substrate and lower gate electrode;depositing and patterning a layer of polycrystalline silicon over saidfirst layer that extend beyond the width of said narrow stripe;depositing a second layer of dielectric material over said layer ofpolycrystalline silicon; depositing a layer of conductive material oversaid second layer; depositing and patterning a resist layer over saidlayer of conductive material such that it overlies said lower gateelectrode and extends beyond one edge of said lower gate electrode;etching away the exposed portion of the layer of conductive materialleaving beneath the resist an offset upper gate electrode which isoffset beyond the edge of the lower gate electrode; forming a blanketion implantation with a suitable impurity thereby forming source anddrain regions in the exposed layer of polycrystalline silicon layer notunderlying the resist; removing the resist, and forming a thirddielectric layer over at least said upper gate electrode.
 2. The methodof claim 1 wherein said stripe of conductive material is polysiliconhaving a width in the range of 0.4 to 1.8 micrometers, and a thicknessin the range of 100 to 2000 Angstroms.
 3. The method of claim 2 whereinthe first layer of dielectric material is SiO₂, having a thickness inthe range of 100 to 600 Angstroms.
 4. The method of claim 3 wherein thethickness of said layer of polycrystalline silicon is in the range of 50to 1000 Angstroms.
 5. The method of claim 4 wherein the thickness ofsaid second layer of dielectric material is in the range of 500 to 2000Angstroms.
 6. The method of claim 5 wherein said second layer ofdielectric material is SiO₂.
 7. The method of claim 6 wherein saidsecond layer of dielectric material is deposited by Low PressureChemical Vapor Deposition (LPCVD) techniques.
 8. The method of claim 1wherein the offset of said upper gate electrode beyond the edge of saidlower gate electrode is in the range of 0.2 to 0.6 micrometers.
 9. Themethod of claim 1 wherein the said offset dual gate thin film FET isembodied as an integral element of a static random access memory devicehaving a plurality of CMOS flip-flop circuits.
 10. The method of claim 9wherein said CMOS circuits each embodies a first thin film FET, and anassociated second thin film FET having a channel of a conductivityopposite to the first FET.
 11. The method of claim 10 wherein the offsetof the upper gate electrode beyond the edge of said lower gate electrodeof said first and said second transistors is in the range of 0.2 to 0.6micrometers.